Highly mismatched GaN1−xSbx alloys: synthesis, structure and electronic properties

Prof. Kin Man YU published an Invited Topical Review article entitled “Highly mismatched GaN1−xSbx alloys: synthesis, structure and electronic properties” in Semiconductor Science and Technology. Highly mismatched alloys (HMAs) are a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films group III-N-V HMAs over almost the entire composition under non-equilibrium.  This paper reviewed recent work of the authors on the synthesis, structural and optical characterization of GaN1−xSbx HMAs which has been suggested as a potential material for solar water dissociation devices. This is an international collaboration with researchers from the US, UK and HK.

Read More at Semiconductor Science and Technology: http://iopscience.iop.org/article/10.1088/0268-1242/31/8/083001