Controllable preparation of β-Ga2O3 epitaxial wafer
Ga2O3, a fourth-generation semiconductor material, possesses exceptional properties such as an ultra-wide bandgap and a high critical breakdown field. However, fabricating epitaxial wafers on Ga2O3 substrates is challenging due to strict quality requirements related to integrity, flatness, uniformity, and so forth. Through autonomous modifications to the epitaxial growth equipment and precise control of gas source ratios via the Hydride Vapor Phase Epitaxy (HVPE) method, we have successfully achieved the growth of high-quality epitaxial wafers. This achievement marks a significant step towards realising large-scale production and harnessing the vast potential of Ga2O3 as a pivotal material in the semiconductor industry.
Dayson
Controllable preparation of β-Ga2O3 epitaxial wafer
Ga2O3, a fourth-generation semiconductor material, possesses exceptional properties such as an ultra-wide bandgap and a high critical breakdown field. However, fabricating epitaxial wafers on Ga2O3 substrates is challenging due to strict quality requirements related to integrity, flatness, uniformity, and so forth. Through autonomous modifications to the epitaxial growth equipment and precise control of gas source ratios via the Hydride Vapor Phase Epitaxy (HVPE) method, we have successfully achieved the growth of high-quality epitaxial wafers. This achievement marks a significant step towards realising large-scale production and harnessing the vast potential of Ga2O3 as a pivotal material in the semiconductor industry.
Team member(s)
Mr Li Dan* (PhD student, Department of Materials Science and Engineering, City University of Hong Kong)
Mr Xu Dacheng (Kunming University of Science and Technology)
Miss Zhou Xiaomin (PhD student, Department of Biomedical Sciences, City University of Hong Kong)
* Person-in-charge
(Info based on the team's application form)
Achievement(s)
- CityU HK Tech 300 Seed Fund (2023)