Research
Research fields
Field-assisted Metal Additive Manufacturing
By constructing a simulation framework, we will investigate the effects of external fields on powder spreading and deposition, powder-molten pool interaction, metal evaporation and spattering, microstructure evolution, phase transition, and defect formation mechanisms. This framework will not only elucidate the mechanisms underlying metal additive manufacturing but also lay a solid foundation for optimizing MAM techniques to enhance the properties of fabricated structures.
A framework for field-assisted process-structure-property evolution in additive manufacturing
High-fidelity simulation for Metal Additive Manufacturing
High-fidelity models for Metal Additive Manufacturing can be devided into four parts based on the aim of the model and the specific governing equations that each solves: (1) powder and (2) molten pool dynamics models in the MAM process, (3) microstructure evolution models and (4) mechanical property models, while an additional part in the end is focused on data-driven modeling.
High-fidelity modeling of additive manufacturing: powder dynamics, molten pool dynamics, microstructure evolution, and mechanical property modeling
Awards
Our team is the biggest winner in this international simulation competition with the highest authority (totally 40 awards presented for 25 tests). We competed with teams from University of Michigan, Northwestern University, NASA Langley Research Center & National Institute of Aerospace, Johns Hopkins University, Sandia National Lab, UIUC, University of Sheffield, etc.
- 1st-place, CHAL-A-AMB2022-01-Spot-TDA&AA, Lu Wang, Yanming Zhang, Wentao Yan (Supervisor)
- 1st-place, CHAL-A-AMB2022-01-Spot-TDW&ASR, Lu Wang, Yanming Zhang, Wentao Yan
- 1st-place, CHAL-AMB2022-03-PTAM, Yanming Zhang, Lu Wang, Wentao Yan
- 2nd-place, CHAL-A-AMB2022-01-Scan-MWD&ASR, Lu Wang, Yanming Zhang, Wentao Yan
- 2nd-place, CHAL-A-AMB2022-01-Scan-TDA&AA, Lu Wang, Yanming Zhang, Wentao Yan
- 2nd-place, CHAL-AMB2022-03-TMPG, Lu Wang, Yanming Zhang, Wentao Yan
- 2nd-place, CHAL-AMB2022-03-TLCR, Lu Wang, Yanming Zhang, Wentao Yan
