This patent introduces an autocatalytic vapor-liquid-solid (VLS) method for fabricating halide perovskite nanowires (ABX₃, where A = Cs, B = Pb/Sn/In/Tl, and X = Cl/Br/I).

The patent introduces an innovative vapor-liquid-solid (VLS) process for fabricating halide perovskites (ABX₃, where A = Cs, B = Pb or Sn, and X = Cl, Br, or I) using noble metal catalysts (e.g., Au). Unlike traditional VS or Sn-catalyzed VLS methods, this approach leverages the spontaneous exothermic reaction between Au and Pb/Sn to form a low-melting-point eutectic alloy (e.g., Au-Pb with a melting temperature of 212°C).

The patent introduces an innovative artificial photosynaptic device based on organic molecule-nanowire heterojunctions.

The patent presents an innovative vapor deposition method for growing semiconductor tellurium nanomeshes at low temperatures (as low as 100°C).

This patent introduces a groundbreaking solution: a full-vdW 1D p-type tellurium (Te)/2D n-type bismuth oxyselenide (Bi₂O₂Se) heterodiode with a nanoscale ultra-photosensitive channel.

The patent introduces a groundbreaking gate-tunable anti-ambipolar phototransistor based on mixed-dimensional van der Waals (vdW) heterojunctions.