中文版本

Opportunity  

The development of one-dimensional (1D) nanomaterials, such as nanowires (NWs), has been a driving force in emerging electronics due to their superior carrier mobility, mechanical flexibility, and energy efficiency. However, challenges remain in achieving scalable, low-cost, and high-performance integration of these materials, especially for large-area applications in the Internet of Things (IoT). Traditional methods, such as post-synthesis assembly or epitaxial growth, often involve high temperatures, strict substrate requirements, and complex processes, which hinder practical applications. Additionally, conventional techniques struggle with compatibility across diverse substrates, including flexible or curved surfaces, limiting their utility in next-generation flexible and wearable electronics. This patent addresses these limitations by introducing a low-temperature, substrate-agnostic method for growing tellurium (Te) nanomeshes, enabling versatile and scalable integration of 1D nanomaterials.  

Technology  

The patent presents an innovative vapor deposition method for growing semiconductor tellurium nanomeshes at low temperatures (as low as 100°C). The process involves:  

1. Substrate Preparation: A variety of substrates (rigid, flexible, curved, or layered) are prepared without stringent requirements.  
2. Tellurium Vaporization: Te powder is vaporized at a high temperature (450–500°C) in a dual-zone vapor transport system.  
3. Nanomesh Growth: The vaporized Te is transported to a low-temperature zone (100°C), where it nucleates, grows laterally into nanowires, and self-welds into a interconnected nanomesh.  

Key innovations include:  

• Multiscale van der Waals (vdW) Interactions: The growth leverages weak vdW forces between Te atomic chains and the substrate, enabling spontaneous strain relaxation and compatibility with arbitrary surfaces.  
• Self-Welding Mechanism: Te nanowires autonomously fuse at junctions, forming robust electrical connections without additional processing.  
• Low-Temperature Compatibility: The method avoids high-temperature or chemical reactions, making it suitable for temperature-sensitive substrates like polymers or paper.  
   

Advantages  

• Universal Substrate Compatibility: Grows on rigid, flexible, curved, and 2D material surfaces.  
• Low-Temperature Process: Enables deposition on heat-sensitive materials (e.g., plastics, paper).  
• High Performance:  
• Field-effect hole mobility up to 145 cm²/V·s.  
• Ultrafast photoresponse (<3 μs)="" in="" infrared="" photodetectors.="">
• High conductivity (266 S/cm) and optical transparency (80%).  
• Scalability: Achieves wafer-scale growth with uniform morphology.  
• Self-Welding: Enhances mechanical robustness and electrical connectivity.  

Applications  

• Flexible Electronics: Wearable sensors, artificial skin, and foldable displays.  
• Optoelectronics: High-speed photodetectors for communication (e.g., 1550 nm wavelength).  
• IoT Devices: Low-cost, large-area electronics on paper or plastic substrates.  
• Heterostructures: Mixed-dimensional (1D/2D) devices with tunable electronic properties.  
• Transparent Conductors: P-type transparent electrodes for solar cells or touchscreens.