This invention uses imprint technology in silicon(Si) for fabricating the high gain and low profile THz gaussian bean antenna(GBA).

To achieve rotation free measurement, two types of antenna probes are needed for the measurement, which are a linearly-polarized (LP) antenna probe and a circularly-polarized (CP) antenna probe.

The invention discloses a rotation-free phaseless far-field gain measurement method of CP antennas. This method uses two types of CP antenna probes, a linearly-polarized standard-gain antenna to obtain the left-hand and right-hand CP gains of the antenna under test (AUT).

The exponential growth in data throughput for wireless communication systems necessitates advanced antenna solutions, such as antenna arrays and multiple-input multiple-output (MIMO) systems, to enhance gain, signal-to-noise ratio, and channel capacity.

The patent introduces an innovative antenna design that addresses the size limitations of traditional wideband complementary antennas.

The patent discloses a complementary antenna (e.g., a broadband complementary antenna) comprising