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Substrate-Integrated Device and Method for Making the Same

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Opportunity

The development of this patent addresses a critical limitation in conventional substrate-integrated devices, particularly those utilizing metallic vias in radio frequency (RF) and integrated circuit (IC) applications. Traditional metallic vias, which are essentially metallized holes in substrates, suffer from significant drawbacks. At microwave frequencies, these vias exhibit high energy losses, reducing the efficiency and performance of devices like printed circuit boards (PCBs), waveguides, and resonators. Additionally, the metallization process is time-consuming, costly, and can introduce manufacturing complexities. These limitations hinder the advancement of compact, high-performance RF and microwave devices, especially in applications requiring precise electromagnetic energy confinement and low-loss signal transmission. The need for a more efficient, cost-effective, and low-loss alternative to metallic vias motivated the invention of this substrate-integrated device with dielectric vias.

Technology

The patent introduces an innovative substrate-integrated device that replaces conventional metallic vias with dielectric vias, offering superior performance and manufacturability. Each dielectric via consists of a via-hole filled with a high-permittivity dielectric material (e.g., perovskite oxides like Barium Titanate or Lead Zirconate Titanate), where the dielectric constant of the filler material is at least twice that of the substrate. This design creates highly reflective boundaries that effectively confine and guide electromagnetic energy, mimicking the function of metallic walls but with significantly reduced losses. The dielectric vias can be arranged in customizable patterns (e.g., arrays or rows) to form waveguides, resonators, or antennas. The method of fabrication involves filling via-holes with a dielectric paste (containing pre-sintered nanoparticles) and optionally enclosing them with prepreg or metallic layers, eliminating the need for high-temperature sintering and simplifying production. This technology enables the integration of low-loss, high-efficiency microwave components directly into substrates, expanding design flexibility for RF systems.

Advantages

  • Reduced Energy Loss: Dielectric vias minimize microwave-frequency losses compared to metallic vias.  
  • Cost-Effective Manufacturing: Eliminates complex metallization processes; uses paste-based filling.  
  • Design Flexibility: Dielectric vias can be arranged in customizable patterns (e.g., waveguides, resonators).  
  • Compact Integration: Enables substrate-integrated devices (e.g., antennas, filters) with smaller footprints.  
  • Material Versatility: Compatible with high-permittivity materials like perovskite oxides.  

Applications

  • Microwave Devices: Substrate-integrated waveguides (SIWs), resonators, and filters.  
  • Antennas: Low-loss dielectric resonator antennas (DRAs) for 5G and IoT.  
  • PCBs: High-frequency circuits with improved signal integrity.  
  • RF Systems: Oscillators, sensors, and communication modules. 
Remarks
IDF: 694
IP Status
Patent granted
Technology Readiness Level (TRL)
4
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Substrate-Integrated Device and Method for Making the Same

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