Opportunity
The development of nanoscale electrodes faces significant challenges in precision, efficiency, and scalability. Existing methods, such as atomic force microscopy (AFM)-based probes, are limited to single-pair electrodes and suffer from slow assembly speeds due to pick-and-place operations. Traditional techniques struggle to achieve high-aspect-ratio (>20) vertical electrode arrays with sub-5nm tip curvature radii, which are critical for applications like neural signal mapping, brain-computer interfaces, and nanoelectronics. Additionally, conventional focused ion beam (FIB) and electron beam-induced deposition (EBID) methods are constrained by material compatibility (e.g., limited to gallium ions) and low throughput. There is a pressing need for a scalable, high-precision fabrication method to enable advanced applications in neuroscience, energy storage, and quantum devices.
Technology
This patent introduces an innovative approach using nanomanipulation robots integrated with scanning/transmission electron microscopes (SEM/TEM) to fabricate nanoscale vertical electrode arrays via near-field and far-field electromagnetic field-controlled direct writing. Key advancements include:
- Near-Field Deposition: A nanorobot equipped with a metal ion source (e.g., silver or gold nanowires) deposits ions under a low-voltage (1–50V) electromagnetic field, achieving atomic-scale precision (tip curvature <5nm) and="" high="" deposition="" rates="" (up="" to="" 500="" nm/min).="" the="" self-focusing="" effect="" of="" ions="" enables="" sub-10nm="" tip="" formation.="">
- Far-Field Deposition: The robot positions a substrate under SEM electron beams, where precursor materials decompose into metal ions under controlled electromagnetic fields (1–20kV acceleration voltage), forming high-aspect-ratio electrodes (>20 length-to-diameter ratio).
- Hybrid Method: Combines far-field (for bulk electrode structure) and near-field (for tip refinement) deposition to optimize speed and precision. The system’s multi-end effector design allows parallel processing, overcoming speed bottlenecks of traditional assembly.
Advantages
- Atomic-Scale Precision: Achieves tip curvature radii <5nm and="" electrode="" diameters="" down="" to="" 20nm.="">
- High Throughput: Direct writing replaces pick-and-place, enabling parallel fabrication with multiple end effectors.
- Material Flexibility: Supports diverse metals (Ag, Au, W) unlike FIB’s limited ion sources.
- Scalability: Modular design compatible with lithography and FIB for large-scale production.
- Versatility: Applicable to 3D nanostructures beyond electrodes, such as quantum dots or MEMS.
Applications
- Neuroscience: Multi-channel arrays for single-neuron stimulation and signal recording in brain-computer interfaces.
- Energy Storage: High-precision electrodes for ion batteries and memristors.
- Nanoelectronics: Interconnects and probes for quantum devices.
- Biomedical Devices: Implantable sensors with minimal tissue damage.
- Materials Science: In situ TEM characterization of ion migration mechanisms.
